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Sheet目录3871

154页 155页 156页 157页 [158页]159页 160页 161页 162页

2006 Microchip Technology Inc.

Preliminary

DS70178C-page 239

dsPIC30F1010/202X

TABLE 21-9:

DC CHARACTERISTICS: I/O PIN OUTPUT SPECIFICATIONS

DC CHARACTERISTICS

Standard Operating Conditions: 3.3V and 5.0V (±10%)

(unless otherwise stated)

Operating temperature

-40°C

≤ TA ≤ +85°C for Industrial

-40°C

≤ TA ≤ +125°C for Extended

Param

No.

Symbol

Characteristic

Min

Typ(1)

Max

Units

Conditions

VOL

Output Low Voltage(2)

DO10

I/O ports

—

0.6

IOL = 8.5 mA, VDD = 5V

——

TBD

IOL = 2.0 mA, VDD = 3.3V

DO16

OSC2/CLKO

—

0.6

IOL = 1.6 mA, VDD = 5V

(RC or EC Osc mode)

—

TBD

IOL = 2.0 mA, VDD = 3.3V

VOH

Output High Voltage(2)

DO20

I/O ports

VDD – 0.7

—

IOH = -3.0 mA, VDD = 5V

TBD

—

IOH = -2.0 mA, VDD = 3.3V

DO26

OSC2/CLKO

VDD – 0.7

—

IOH = -1.3 mA, VDD = 5V

(RC or EC Osc mode)

TBD

—

IOH = -2.0 mA, VDD = 3.3V

Capacitive Loading Specs

on Output Pins(2)

DO50

COSC2

OSC2 pin

—

In HS mode when external

clock is used to drive OSC1.

DO56

CIO

All I/O pins and OSC2

—

RC or EC Osc mode

DO58

SCL, SDA

—

400

In I2C mode

Legend: TBD = To Be Determined

Note 1:

Data in “Typ” column is at 5V, 25°C unless otherwise stated. Parameters are for design guidance only and

are not tested.

These parameters are characterized but not tested in manufacturing.

TABLE 21-10: DC CHARACTERISTICS: PROGRAM AND EEPROM

DC CHARACTERISTICS

Standard Operating Conditions: 3.3V and 5.0V (±10%)

(unless otherwise stated)

Operating temperature

-40°C

≤ TA ≤ +85°C for Industrial

-40°C

≤ TA ≤ +125°C for Extended

Param

No.

Symbol

Characteristic

Min

Typ(1)

Max

Units

Conditions

Program Flash Memory(2)

D130

Cell Endurance

10K

100K

—

E/W

D131

VPR

VDD for Read

VMIN

—5.5

VMIN = Minimum operating

voltage

D132

VEB

VDD for Bulk Erase

4.5

—

5.5

D133

VPEW

VDD for Erase/Write

3.0

—

5.5

D134

TPEW

Erase/Write Cycle Time

—

D135

TRETD

Characteristic Retention

100

—

Year

Provided no other specifications

are violated

D136

TEB

ICSP Block Erase Time

—

D137

IPEW

IDD During Programming

—

Row Erase

D138

IEB

IDD During Programming

—

Bulk Erase

Note 1:

Data in “Typ” column is at 5V, 25°C unless otherwise stated.

These parameters are characterized but not tested in manufacturing.

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